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cmos 1.8 v to 5.5 v, 2.5 spdt switch/2:1 mux in tiny sc70 package adg779 rev. a information furnished by analog devices is believed to be accurate and reliable. however, no responsibility is assumed by analog devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. one technology way, p.o. box 9106, norwood, ma 02062-9106, u.s.a. tel: 781.329.4700 www.analog.com fax: 781.461.3113 ? 2005 analog devices, inc. all rights reserved. features 1.8 v to 5.5 v single supply 2.5 on resistance 0.75 on-resistance flatness ?3 db bandwidth >200 mhz rail-to-rail operation 6-lead sc70 package fast switching times t on 20 ns t off 6 ns typical power consumption (<0.01 w) ttl/cmos compatible applications battery-powered systems communication systems sample hold systems audio signal routing video switching mechanical reed relay replacements functional block diagram in adg779 s2 s1 d switches shown for a logic 1 input 02491-001 figure 1. general description the adg779 is a monolithic cmos spdt (single-pole, double-throw) switch. this switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. the adg779 operates from a single supply range of 1.8 v to 5.5 v, making it ideal for use in battery-powered instruments and with the new generation of dacs and adcs from analog devices, inc. each switch of the adg779 conducts equally well in both directions when on. the adg779 exhibits break-before-make switching action. because of the advanced submicron process, ?3 db bandwidth of greater than 200 mhz can be achieved. the adg779 is available in a 6-lead sc70 package. product highlights 1. tiny 6-lead sc70 package. 2. 1.8 v to 5.5 v single-supply operation. the adg779 offers high performance, including low on resistance and fast switching times, and is fully specified and guaranteed with 3 v and 5 v supply rails. 3. ver y l ow r on (5 max at 5 v, 10 max at 3 v). at 1.8 v operation, r on is typically 40 over the temperature range. 4. on-resistance flatness (r flat (on) ) (0.75 typ). 5. ?3 db bandwidth > 200 mhz. 6. low power dissipation. cmos construction ensures low power dissipation. 7. 14 ns switching times.
adg779 rev. a | page 2 of 12 table of contents features .............................................................................................. 1 applications ....................................................................................... 1 functional block diagram .............................................................. 1 general description ......................................................................... 1 product highlights ........................................................................... 1 revision history ............................................................................... 2 specifications ..................................................................................... 3 absolute maximum ratings ............................................................ 5 esd caution .................................................................................. 5 pin configuration and function descriptions ..............................6 ter mi nolo g y .......................................................................................7 typical performance characteristics ..............................................8 test circ u its ..................................................................................... 10 outline dimensions ....................................................................... 12 ordering guide .......................................................................... 12 revision history 10/05rev. 0 to rev. a updated format..................................................................universal changes to table 1............................................................................ 3 changes to table 2............................................................................ 4 changes to table 3............................................................................ 5 changes to terminology section.................................................... 7 changes to ordering guide .......................................................... 12 7/01revision 0: initial version
adg779 rev. a | page 3 of 12 specifications v dd = 5 v 10%, gnd = 0 v 1 table 1. b version parameter 25c ?40c to +85c unit test conditions/comments analog switch analog signal range 0 v to v dd v on resistance (r on ) 2.5 typ v s = 0 v to v dd , i s = ?10 ma, see figure 12 5 6 max on-resistance match between channels (r on ) 0.1 typ v s = 0 v to v dd , i s = ?10 ma 0.8 max on-resistance flatness (r flat (on) ) 0.75 typ v s = 0 v to v dd , i s = ?10 ma 1.2 max leakage currents 2 v dd = 5.5 v source off leakage i s (off ) 0.01 0.05 na typ v s = 4.5 v/1 v, v d = 1 v/4.5 v, see figure 13 channel on leakage i d , i s (on) 0.01 0.05 na typ v s = v d = 1 v, or v s = v d = 4.5 v, see figure 14 digital inputs input high voltage, v inh 2.4 v min input low voltage, v inl 0.8 v max input current i inl or i inh 0.005 a typ v in = v inl or v inh 0.1 a max dynamic characteristics 2 t on 14 ns typ r l = 300 , c l = 35 pf 20 ns max v s = 3 v, see figure 15 t off 3 ns typ r l = 300 , c l = 35 pf 6 ns max v s = 3 v, see figure 15 break-before-make time delay, t d 8 ns typ r l = 300 , c l = 35 pf 1 ns min v s1 = v s2 = 3 v, see figure 16 off isolation ?67 db typ r l = 50 , c l = 5 pf, f = 10 mhz ?87 db typ r l = 50 , c l = 5 pf, f = 1 mhz, see figure 17 channel-to-channel crosstalk ?62 db typ r l = 50 , c l = 5 pf, f = 10 mhz ?82 db typ r l = 50 , c l = 5 pf, f = 1 mhz, see figure 18 bandwidth C3 db 200 mhz typ r l = 50 , c l = 5 pf, see figure 19 c s (off ) 7 pf typ f = 1 mhz c d , c s (on) 27 pf typ f = 1 mhz power requirements v dd = 5.5 v digital inputs = 0 v or 5 v i dd 0.001 a typ 1.0 a max 1 temperature range is b version, ?40c to +85c. 2 guaranteed by design, not subject to production test.
adg779 rev. a | page 4 of 12 v dd = 3 v 10%, gnd = 0 v 1 table 2. b version parameter 25c ?40c to +85c unit test conditions/comments analog switch analog signal range 0 v to v dd v on resistance (r on ) 6 7 typ v s = 0 v to v dd , i s = C10 ma, see figure 12 10 max on-resistance match between channels (r on ) 0.1 typ v s = 0 v to v dd , i s = C10 ma 0.8 max on-resistance flatness (r flat (on) ) 2.5 typ v s = 0 v to v dd , i s = C10 ma leakage currents 2 v dd = 3.3 v source off leakage i s (off ) 0.01 0.05 na typ v s = 3 v/1 v, v d = 1 v/3 v, see figure 13 channel on leakage i d , i s (on) 0.01 0.05 na typ v s = v d = 1 v, or v s = v d = 3 v, see figure 14 digital inputs input high voltage, v inh 2.0 v min input low voltage, v inl 0.8 v max input current i inl or i inh 0.005 a typ v in = v inl or v inh 0.1 a max dynamic characteristics 2 t on 16 ns typ r l = 300 , c l = 35 pf 24 ns max v s = 2 v, see figure 15 t off 4 ns typ r l = 300 , c l = 35 pf 7 ns max v s = 2 v, see figure 15 break-before-make time delay, t d 8 ns typ r l = 300 , c l = 35 pf 1 ns min v s1 = v s2 = 2 v, see figure 16 off isolation C67 db typ r l = 50 , c l = 5 pf, f = 10 mhz C87 db typ r l = 50 , c l = 5 pf, f = 1 mhz, see figure 17 channel-to-channel crosstalk C62 db typ r l = 50 , c l = 5 pf, f = 10 mhz C82 db typ r l = 50 , c l = 5 pf, f = 1 mhz, see figure 18 bandwidth ?3 db 200 mhz typ r l = 50 , c l = 5 pf, see figure 19 c s (off ) 7 pf typ f = 1 mhz c d , c s (on) 27 pf typ f = 1 mhz power requirements v dd = 3.3 v digital inputs = 0 v or 3 v i dd 0.001 a typ 1.0 a max 1 temperature range is b version, ?40c to +85c. 2 guaranteed by design, not subject to production test.
adg779 rev. a | page 5 of 12 absolute maximum ratings t a = 25c, unless otherwise noted. table 3. parameter rating v dd to gnd ?0.3 v to +7 v analog, digital inputs 1 ?0.3 v to v dd + 0.3 v or 30 ma, whichever occurs first peak current, s or d 100 ma (pulsed at 1 ms, 10% duty cycle max) continuous current, s or d 30 ma operating temperature range industrial (b version) ?40c to +85c storage temperature range ?65c to +150c junction temperature 150c sc70 package, power dissipation 315 mw ja thermal impedance 332c/w jc thermal impedance 120c/w lead temperature, soldering vapor phase (60 sec) 215c infrared (15 sec) 220c reflow soldering (pb-free) peak temperature 260 (+0/?5)c time at peak temperature 10 sec to 40 sec 1 overvoltages at in, s, or d are clamped by internal diodes. current should be limited to the maximum ratings given. stresses above those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. table 4. truth table adg779 in switch s1 switch s2 0 on off 1 off on esd caution esd (electrostatic discharge) sensitive device. electros tatic charges as high as 4000 v readily accumulate on the human body and test equipment and can discharge wi thout detection. although this product features proprietary esd protection circuitry, permanent dama ge may occur on devices subjected to high energy electrostatic discharges. therefore, proper esd pr ecautions are recommended to avoid performance degradation or loss of functionality.
adg779 rev. a | page 6 of 12 pin configuration and fu nction descriptions in 1 v dd 2 gnd 3 s2 6 d 5 s1 4 adg779 top view (not to scale) 02491-002 figure 2. pin configuration table 5. pin function descriptions pin no. mneonic description 1 in logic control input. 2 v dd most positive power supply potential. 3 gnd ground (0 v) reference. 4 s1 source terminal. can be an input or an output. 5 d drain terminal. can be an input or an output. 6 s2 source terminal. can be an input or an output.
adg779 rev. a | page 7 of 12 terminology v dd most positive power supply potential. i dd positive supply current. gnd ground (0 v) reference. s source terminal. can be an input or an output. d drain terminal. can be an input or an output. in logic control input. v d (v s ) analog voltage on drain (d) and source (s) terminals. r on ohmic resistance between the d and s. r flat (on) flatness is defined as the difference between the maximum and minimum value of on resistance as measured. r on on-resistance mismatch between any two channels. i s (off) source leakage current with the switch off. i d (off) drain leakage current with the switch off. i d , i s (on) channel leakage current with the switch on. v inl maximum input voltage for logic 0. v inh minimum input voltage for logic 1. i inl (i inh ) input current of the digital input. c s (off) off switch source capacitance. measured with reference to ground. c d (off) off switch drain capacitance. measured with reference to ground. c d , c s (on) on switch capacitance. measured with reference to ground. c in digital input capacitance. t on delay time between the 50% and 90% points of the digital input and switch on condition. t off delay time between the 50% and 90% points of the digital input and switch off condition. t bbm on or off time measured between the 80% points of both switches when switching from one to another. charge injection a measure of the glitch impulse transferred from the digital input to the analog output during on/off switching. off isolation a measure of unwanted signal coupling through an off switch. crosstalk a measure of unwanted signal that is coupled through from one channel to another because of parasitic capacitance. ?3 db bandwidth the frequency at which the output is attenuated by 3 db. on response the frequency response of the on switch. insertion loss the loss due to the on resistance of the switch. thd + n the ratio of harmonic amplitudes plus noise of a signal to the fundamental.
adg779 rev. a | page 8 of 12 typical performance characteristics 5.0 0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 6.0 5.5 v d or v s ? drain or source voltage (v) r on ( ? ) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 t a =25c v dd =2.7v v dd =5v v dd =3v v dd =4.5v 0 2491-003 figure 3. on resistance as a function of v d (v s ) single supplies 5.0 0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 6.0 5.5 v d or v s ? drain or source voltage (v) r on ( ? ) 0 0.5 1.0 1.5 2.0 2.5 3.0 v dd = 3v +85c +25c ?40c 02491-004 figure 4. on resistance as a function of v d (v s ) for different temperatures v dd = 3 v v dd = 5v +85c +25c ?40c 5.0 0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 6.0 5.5 v d or v s ? drain or source voltage (v) r on ( ? ) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 02491-005 figure 5. on resistance as a function of v d (v s ) for different temperatures v dd = 5 v temperature (c) 0.15 0.10 ?0.05 0.05 0 v dd =5v v d =4.5v/1v v s =1v/4.5v i d ,i s (on) i s (off) 0 102030405060708090 current (na) 02491-006 figure 6. leakage currents as a function of temperature temperature (c) 0.15 0.10 ?0.05 0.05 0 v dd = 3v v d = 3v/1v v s = 1v/3v 0 102030405060708090 current (na) i d , i s (on) i s (off) 02491-007 figure 7. leakage currents as a function of temperature 1n 10n 100n 1 10 100 1m 10 m v dd = 5v 1 10 100 1k 10k 100k 1m 10m 100m frequency (hz) i supply (a) 0 2491-008 figure 8. supply current vs. input switching frequency
adg779 rev. a | page 9 of 12 ?120 ?110 ?100 ?90 ?130 ?80 ?70 ?60 ?50 ?40 ? 30 frequency (hz) off isolation (db) 10k 100k 1m 10m 100m v dd = 5v, 3v 02491-009 figure 9. off isol ation vs. frequency ?120 ?110 ?100 ?90 ?130 ?80 ?70 ?60 ?50 ?40 ? 30 frequency (hz) crosstalk (db) 10k 100k 1m 10m 100m v dd = 5v, 3v 02491-010 figure 10. crosstalk vs. frequency ?6 0 frequency (hz) on response (db) 10k 100k 1m 10m 100m v dd = 5v ?4 ?2 02491-011 figure 11. on response vs. frequency
adg779 rev. a | page 10 of 12 test circuits v s i ds r on =v1/i ds sd v1 02491-012 figure 12. on resistance a a i d (off) i s (off) v s v d sd 02491-013 figure 13. off leakage a i d (on) v d v s sd 02491-014 figure 14. on leakage v dd r l 300 ? c l 35pf v dd 0.1f in gnd s d v s v out 50% 50% 90% 90% t off t on v in v out 02491-015 figure 15. switching times t d t d 50% 50% 50% 50% 0v 0v v in v out v dd r l2 300? c l2 35pf v dd 0.1f in s1 gnd s2 d2 d v s1 v s2 v in v out 02491-016 figure 16. break-before-make time delay, t d
adg779 rev. a | page 11 of 12 network analyzer v dd gnd off isolation = 20 log v dd 0.1f s d 50? 50 ? v s v out r l 50? v out v s in v in 02491-017 figure 17. off isolation network analyzer v dd gnd channel-to-channel crosstalk = 20 log v dd 0.1f s1 d 50 ? v s v out v s s2 r l 50 ? r 50 ? 0 2491-018 v out in figure 18. channel-to-channel crosstalk network analyzer v dd gnd insertion loss = 20 log v dd 0.1f s d 50 ? v s v out r l 50 ? v out with switch v out without switch in v in 02491-019 figure 19. bandwidth
adg779 rev. a | page 12 of 12 outline dimensions compliant to jedec standards mo-203-ab 0.22 0.08 0.30 0.15 1.00 0.90 0.70 seating plane 4 5 6 3 2 1 pin 1 0.65 bsc 1.30 bsc 0.10 max 0.10 coplanarity 0.40 0.10 1.10 0.80 2.20 2.00 1.80 2.40 2.10 1.80 1.35 1.25 1.15 0.46 0.36 0.26 figure 20. 6-lead thin shrink small outline transistor package [sc70] (ks-6) dimensions shown in millimeters ordering guide model temperature range package description package option branding 1 adg779bks-r2 C40c to +85c 6-lead thin shrink sm all outline transistor package (sc70) ks-6 skb adg779bks-reel C40c to +85c 6-lead thin shrink small outline transistor package (sc70) ks-6 skb adg779bks-reel7 C40c to +85c 6-lead thin shrink small outline transistor package (sc70) ks-6 skb adg779bksz-r2 2 C40c to +85c 6-lead thin shrink small outline transistor package (sc70) ks-6 s0m adg779bksz-reel 2 C40c to +85c 6-lead thin shrink small outline transistor package (sc70) ks-6 s0m adg779bksz-reel7 2 C40c to +85c 6-lead thin shrink small outline transistor package (sc70) ks-6 s0m 1 brand on these packages is limited to three characters due to space constraints. 2 z = pb-free part. ? 2005 analog devices, inc. all rights reserved. trademarks and registered trademarks are the property of their respective owners. c02491C0C10/05(a)

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